CNT array capacitive MEM switches for reconfigurable interconnects

This paper reports, for the first time, the wafer-level technology and characteristics of RF MEMS capacitive switches based on CNT arrays. A surface micromachining fabrications process using grown horizontal CNT membranes from pre-patterned catalysts is validated and fully functional devices are reported. The RF characteristics of the CNT capacitive switches up to 6GHz show very low actuation voltage (6V) and power consumption and an isolation of 10dB at 5GHz. The CNT membranes present an equivalent Young´s modulus of 8.5GPa and a resistivity of 0.0083Ωcm, extracted from the DC characterization. Their features are promising and support the idea that, once the CNT horizontal interconnect will become a reality, their reconfigurability at high frequency is possible with switches based on CNTs, exploiting the same CNT material as the long horizontal interconnects.