An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-µm CMOS technology

Author

Chi, Ping-Sung ; Tsai, Zuo-Min ; Kuo, Jing-Lin ; Lin, Kun-You ; Wang, Huei

Author_Institution

Dept. of Electr. Eng. & Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

1678

Lastpage

1681

Abstract

An X-band high efficiency power amplifier with the highest PAE is presented in this letter. The single-stage power amplifier is implemented in TSMC standard bulk 0.18-μm 1P6M CMOS technology. In order to obtain wide bandwidth at PAE and output power, broadband output and input matching network are adopted in the design. From the measurements, the power amplifier obtained the best PAE of 25.8% and saturation output power of 23.8 dBm at 9.5 GHz. Besides, this PA demonstrates a 1-dB power bandwidth from 7.8 to 11 GHz and the PAE within the band all exceed 20%. To our knowledge, this power amplifier has the highest PAE, the smallest chip size, and wide bandwidth of output power and PAE in CMOS amplifiers at X-band to date.

Keywords

CMOS analogue integrated circuits; microwave power amplifiers; CMOS technology; TSMC standard bulk; X-band high efficiency power amplifier; frequency 9.5 GHz to 11 GHz; fully integrated power amplifier; input matching network; single-stage power amplifier; size 0.18 mum; smallest chip size; CMOSFET power amplifiers; X-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616141