DocumentCode :
531430
Title :
K-band CMOS-based power amplifier module with MEMS tunable bandpass filter
Author :
Joshin, Kazukiyo ; Kawano, Yoichi ; Mi, Xiaoyu ; Toyoda, Osamu ; Suzuki, Toshihide ; Hirose, Tatsuya ; Ueda, Satoshi
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
1682
Lastpage :
1685
Abstract :
This paper presents a novel tunable power amplifier module consisting of a CMOS-based broadband power amplifier and a MEMS tunable bandpass filter in K-band. The 90-nm CMOS-based power amplifier with a two-stage cascode configuration and a broadband output matching circuit has an output power of over 20 dBm at a wide frequency range between 16 GHz and 26 GHz. The power amplifier module with a MEMS tunable bandpass filter demonstrates tunable frequency characteristics from 19.5 GHz to 24.5 GHz with a linear gain of over 17 dB and a P3dB output power of over 20 dBm. This tunable power amplifier technique is a first step toward future reconfigurable radio front-end modules up to K-band.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; band-pass filters; field effect MMIC; micromechanical devices; nanoelectronics; CMOS-based broadband power amplifier; K-band CMOS-based power amplifier module; MEMS tunable bandpass filter; broadband output matching circuit; frequency 16 GHz to 26 GHz; reconfigurable radio front-end modules; size 90 nm; two-stage cascode configuration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616265
Link To Document :
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