DocumentCode :
531489
Title :
G-band low noise amplifier and oscillator for synthetic aperture applications
Author :
Desruelles, Guillaume ; Rolland, Nathalie ; Rolland, Paul-Alain
Author_Institution :
Inst. de Rech. sur les Composants Logiciels et Materiels pour l´´Inf. et la Commun. Av. (IRCICA), Univ. des Sci. et Technol. de Lille 1 (USTL), Villeneuve-d´´Ascq, France
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
525
Lastpage :
528
Abstract :
This paper presents the results of G-Band Monolithic Microwave Integrated Circuits (MMIC) for passive imaging applications. The studied system is a Y-shaped interferometer. This kind of system provides both high resolution and a compact system. MMIC were made using a 70 nm GaAs metamorphic High Electron Mobility Transistor process from OMMIC (France). A Low-Noise Amplifier performances are presented, measurement results provide a noise figure of 5 dB with a gain of 20 dB on 10 GHz bandwidth around 140 GHz. The second circuit is an oscillator, measurement results give an oscillation frequency close to 146 GHz.
Keywords :
III-V semiconductors; MMIC amplifiers; MMIC oscillators; gallium arsenide; high electron mobility transistors; low noise amplifiers; radar interferometry; synthetic aperture radar; G-band MMIC; G-band low noise amplifier; G-band monolithic microwave integrated circuits; GaAs; Y-shaped interferometer; bandwidth 10 GHz; gain 20 dB; metamorphic high electron mobility transistor process; noise figure; noise figure 5 dB; oscillation frequency; oscillator circuit; passive imaging; size 70 nm; synthetic aperture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616351
Link To Document :
بازگشت