An integrated C-Band SiGe variable gain amplifier and reflected type phase shifter for phased array T/R modules

A C-Band SiGe BiCMOS variable gain cascode amplifier (VGA) and reflection type phase shifter (RTPS) have been developed as a monolithic microwave integrated circuit (MMIC) with 45-dB gain control and 240° phase control with a SiGe varactor tuning range (Cmax/Cmin) of only 2.23. The proposed VGA combines the functionality of an amplifier and an attenuator. The RTPS uses a transformed single resonated varactor load and consumes zero DC power. The chip is 1.7 mm², operates with a low bias voltage, is designed for C-band phased array T/R modules, and is fabricated using a commercial 0.35 μm SiGe BiCMOS process.