Evaluation of sub-32nm CMOS technology for Millimeter wave applications

Today, the performances of CMOS technology with f_T around 250GHz and f_max higher than 250GHz demonstrates the capability to integrate Millimeter wave applications from a transistor point of view. A key factor is the integration of passive components. In this paper we present, for the first time, the MMW performances of 32 nm Back End Of Line (BEOL) CMOS technology through the achievement of passive components and scalable models (on-chip microstrip transmission lines with losses less than 1dB/mm up to 60GHz) and MMW functions (hybrid coupler, band pass filter and Wilkinson power divider around 77GHz).