Title :
Integrated-Schottky-diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz
Author :
Maroldt, Stephan ; Quay, Rüdiger ; Haupt, Christian ; Kiefer, Rudolf ; Wiegner, Dirk ; Ambacher, Oliver
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
This work describes the integration of Schottky-diodes into fast GaN MMIC technology suitable for the realization of switch-mode amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called 3rd-quadrant-issue, which reduces the efficiency in bandpass-Δ-Σ class-S-type amplifiers, can be diminished on device level. MMIC core chips are demonstrated which provide good PAE under Δ-S operation at 5.2 Gbps.
Keywords :
MMIC; Schottky diodes; delta-sigma modulation; gallium compounds; high electron mobility transistors; power amplifiers; GaN; GaN HFET; GaN MMIC technology; bandpass-Δ-Σ class-S-type amplifier; bit rate 5.2 Gbit/s; frequency 2 GHz; high-efficiency digital PA MMIC; integrated-Schottky-diode; switch-mode amplifier core chip;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
