• DocumentCode
    531558
  • Title

    Integrated-Schottky-diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz

  • Author

    Maroldt, Stephan ; Quay, Rüdiger ; Haupt, Christian ; Kiefer, Rudolf ; Wiegner, Dirk ; Ambacher, Oliver

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    636
  • Lastpage
    639
  • Abstract
    This work describes the integration of Schottky-diodes into fast GaN MMIC technology suitable for the realization of switch-mode amplifier core chips for class-S operation at 2 GHz. With the demonstration of this technology, the so-called 3rd-quadrant-issue, which reduces the efficiency in bandpass-Δ-Σ class-S-type amplifiers, can be diminished on device level. MMIC core chips are demonstrated which provide good PAE under Δ-S operation at 5.2 Gbps.
  • Keywords
    MMIC; Schottky diodes; delta-sigma modulation; gallium compounds; high electron mobility transistors; power amplifiers; GaN; GaN HFET; GaN MMIC technology; bandpass-Δ-Σ class-S-type amplifier; bit rate 5.2 Gbit/s; frequency 2 GHz; high-efficiency digital PA MMIC; integrated-Schottky-diode; switch-mode amplifier core chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=531558