Title :
Band-reconfigurable LDMOS power amplifier
Author :
Nemati, Hossein Mashad ; Grahn, Jan ; Fager, Christian
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
A band-reconfigurable LDMOS high power amplifier (PA) with state-of-the-art performance is presented. The frequency reconfigurability is implemented by band-switchable matching networks using PIN diodes. The PA provides power-added efficiencies which are higher than 61% and output power levels exceeding 8 W at 0.9 GHz, 1.5 GHz, and 1.9 GHz. The input return loss in all the three bands is better than 12 dB.
Keywords :
microwave power amplifiers; p-i-n diodes; switched networks; PIN diode; band-reconfigurable LDMOS high power amplifier; band-switchable matching network; frequency 0.9 GHz; frequency 1.5 GHz; frequency 1.9 GHz; frequency reconfigurability; power-added efficiency;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
