DocumentCode :
531570
Title :
A 160-GHz low-noise downconverter in a SiGe HBT technology
Author :
Öjefors, Erik ; Pourchon, Franck ; Chevalier, Pascal ; Pfeiffer, Ullrich R.
Author_Institution :
Univ. of Wuppertal, Wuppertal, Germany
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
521
Lastpage :
524
Abstract :
A 160-GHz downconversion front-end for imaging arrays fabricated in a SiGe HBT technology is presented. The front-end features a fully differential architecture compatible with balanced on or off-chip antennas consisting of a three-stage LNA with 24 dB gain and Gilbert-cell mixer operating from -7dBm fundamental LO signal. The downconverter consumes 50 mA from a 3.3V supply and requires is 0.1 mm2 die area (excl. pads) per channel. With an 160-GHz input signal and an IF frequency of 150 MHz, the implemented front-end yields a 27-dB conversion gain and a 7.4-dB/9.5-dB (without/with auxiliary on-chip input balun) system noise figure.
Keywords :
MMIC frequency convertors; baluns; heterojunction bipolar transistors; low noise amplifiers; millimetre wave mixers; silicon compounds; Gilbert-cell mixer; HBT technology; balanced off-chip antennas; balanced on-chip antennas; conversion gain; current 50 mA; downconversion front-end; frequency 150 MHz; frequency 160 GHz; imaging arrays; low-noise downconverter; onchip input balun system noise figure; three-stage LNA; voltage 3.3 V; MMIC frequency converters; Millimeter wave receivers; heterojunction bipolar transistors; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616483
Link To Document :
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