A 160-GHz low-noise downconverter in a SiGe HBT technology

Author

Öjefors, Erik ; Pourchon, Franck ; Chevalier, Pascal ; Pfeiffer, Ullrich R.

Author_Institution

Univ. of Wuppertal, Wuppertal, Germany

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

521

Lastpage

524

Abstract

A 160-GHz downconversion front-end for imaging arrays fabricated in a SiGe HBT technology is presented. The front-end features a fully differential architecture compatible with balanced on or off-chip antennas consisting of a three-stage LNA with 24 dB gain and Gilbert-cell mixer operating from -7dBm fundamental LO signal. The downconverter consumes 50 mA from a 3.3V supply and requires is 0.1 mm² die area (excl. pads) per channel. With an 160-GHz input signal and an IF frequency of 150 MHz, the implemented front-end yields a 27-dB conversion gain and a 7.4-dB/9.5-dB (without/with auxiliary on-chip input balun) system noise figure.

Keywords

MMIC frequency convertors; baluns; heterojunction bipolar transistors; low noise amplifiers; millimetre wave mixers; silicon compounds; Gilbert-cell mixer; HBT technology; balanced off-chip antennas; balanced on-chip antennas; conversion gain; current 50 mA; downconversion front-end; frequency 150 MHz; frequency 160 GHz; imaging arrays; low-noise downconverter; onchip input balun system noise figure; three-stage LNA; voltage 3.3 V; MMIC frequency converters; Millimeter wave receivers; heterojunction bipolar transistors; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616483