• DocumentCode
    531641
  • Title

    A new multi-harmonic and bilateral behavioral model taking into account short term memory effect

  • Author

    Demenitroux, W. ; Maziere, C. ; Gasseling, Tony ; Gustavsen, Bjorn ; Campovecchio, M. ; Quere, R.

  • Author_Institution
    AMCAD Eng., Limoges, France
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    473
  • Lastpage
    476
  • Abstract
    This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) or packaged transistors used in communication systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. The model results on a Multi-harmonics Bilateral model which handles short-term memory effects. In this work, the behavioral model developed was extracted from time domain load pull measurement performed on one amplifier. Then, the model was used for the simulation of the amplifier´s response using a two tones and a CW signal under moderate mismatched load operating conditions.
  • Keywords
    Volterra equations; amplifiers; transistors; Agilent X-parameters; CW signal; bilateral behavioral model; communication system; dynamic Volterra theory; harmonic superposition; macro modeling; mismatched load operating condition; model topology; multiharmonic behavioral model; multiharmonics bilateral model; packaged transistors; short term memory effect; solid-state amplifier; time domain load pull measurement; Behavioral model; Complex Envelope; Non linear memory; SSA;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5616612