DocumentCode :
531665
Title :
Enhanced linearity and efficiency of HBT MMIC power amplifiers for WCDMA applications
Author :
Gu, Zeji ; Zhang, Shuyun
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
1002
Lastpage :
1005
Abstract :
A novel linearizer based on a bias boosting technique is proposed, which is composed of a series transistor, a series resistor and a shunt capacitor, and across between the base and the collector of the RF HBT. The new bias boosting is realized and demonstrated through a GaAs HBT two-stage PA under the WCDMA/900 MHz band applications. At a supply voltage of 3.0 V, the PA exhibits the following results: the gain of 31 dB, Pout of 29 dBm, the PAE of 45% at the maximum output power, and inter modulation distortion IMD3 of better than 30 dBc. The performance comparisons are made between with and without the linearizer. The results show that the proposed bias boosting technique can improve both PAE and linearity, especially at the power back off region.
Keywords :
MMIC; code division multiple access; heterojunction bipolar transistors; power amplifiers; GaAs HBT two-stage PA; HBT MMIC power amplifiers; WCDMA applications; WCDMA/900 MHz band applications; bandwidth 900 MHz; bias boosting technique; intermodulation distortion; series resistor; series transistor; shunt capacitor; voltage 3 V;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616645
Link To Document :
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