DocumentCode :
531696
Title :
Tunable SIW bandpass filters with PIN diodes
Author :
Armendariz, Marcelino ; Sekar, Vikram ; Entesari, Kamran
Author_Institution :
Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
830
Lastpage :
833
Abstract :
This paper introduces a novel tunable SIW filter implemented using PIN diode switching elements. The two-pole filter provides six states ranging from 1.55 GHz to 2.0 GHz (25% tuning). Fractional bandwidth ranges from 2.3% - 3.0% with insertion loss less than 5.4 dB and return loss greater than 14 dB over the entire tuning range. Each SIW cavity is tuned by perturbing via posts connecting or disconnecting to/from the cavity´s top metal layer. In order to separate the biasing network from the SIW filter, a three-layer PCB is fabricated using Rogers RT/duroid substrates.
Keywords :
band-pass filters; p-i-n diodes; poles and zeros; substrate integrated waveguides; PIN diodes; Rogers RT/duroid substrates; substrate integrated waveguide; three-layer PCB; tunable SIW bandpass filters; two-pole filter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616684
Link To Document :
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