DocumentCode
531696
Title
Tunable SIW bandpass filters with PIN diodes
Author
Armendariz, Marcelino ; Sekar, Vikram ; Entesari, Kamran
Author_Institution
Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
830
Lastpage
833
Abstract
This paper introduces a novel tunable SIW filter implemented using PIN diode switching elements. The two-pole filter provides six states ranging from 1.55 GHz to 2.0 GHz (25% tuning). Fractional bandwidth ranges from 2.3% - 3.0% with insertion loss less than 5.4 dB and return loss greater than 14 dB over the entire tuning range. Each SIW cavity is tuned by perturbing via posts connecting or disconnecting to/from the cavity´s top metal layer. In order to separate the biasing network from the SIW filter, a three-layer PCB is fabricated using Rogers RT/duroid substrates.
Keywords
band-pass filters; p-i-n diodes; poles and zeros; substrate integrated waveguides; PIN diodes; Rogers RT/duroid substrates; substrate integrated waveguide; three-layer PCB; tunable SIW bandpass filters; two-pole filter;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5616684
Link To Document