Title :
325GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology
Author :
Gianesello, F. ; Pilard, R. ; Lepilliet, S. ; Waldhoff, N. ; Durand, C. ; Boret, S. ; Martineau, B. ; Dambrine, G. ; Gloria, D. ; Rauber, B. ; Raynaud, C.
Author_Institution :
TPS Lab., STMicroelectronics, Crolles, France
Abstract :
Today, measurement of 65nm CMOS and 130nm-based SiGe HBTs technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III-V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip coplanar waveguides (CPWs), which have been achieved in STMicroelectronics advanced nanometric RF CMOS High Resistivity (HR) SOI (ρ> 1kΩ·cm) process, and characterized up to 325GHz are reported. Moreover, for the first time passive circuits working @ 325GHz have been achieved on silicon and characterized demonstrating state-of-the-art performances and good agreement with electric simulations.
Keywords :
CMOS integrated circuits; band-pass filters; coplanar waveguides; heterojunction bipolar transistors; high electron mobility transistors; silicon-on-insulator; CPW band pass filter; III-V HEMT; SiGe HBT; advanced HR SOI RF CMOS technology; current gain cut-off frequency; frequency 325 GHz; maximum oscillation frequency; millimeter wave applications; nanometric RF CMOS high resistivity SOI; on-chip coplanar waveguides; passive integration; size 130 nm; size 65 nm; Band pass filters; Bandwidth; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Silicon; Substrates;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
