Title :
GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz
Author :
Sledzik, H. ; Reber, R. ; Bunz, B. ; Schuh, P. ; Oppermann, M. ; Musser, M. ; Seelmann-Eggebert, M. ; Quay, R.
Author_Institution :
Defence Electron., EADS Deutschland GmbH, Ulm, Germany
Abstract :
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for broadband high power amplifiers. Output power levels with a peak value of 90 W at lower frequencies and more than 40 W up to 6 GHz are measured. With these power amplifiers novel EW system approaches can be investigated.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; aluminium compounds; field effect MMIC; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; HEMT technology; active electronically scanned array EW systems; broadband applications; communication jammers; electronic warfare applications; frequency 2 GHz to 6 GHz; hybrid power amplifier building block; output power levels; power amplifier module; power amplifiers; Broadband amplifiers; Frequency measurement; Gain; Gallium nitride; Power amplifiers; Substrates; AlGaN/GaN; HPA; broadband power amplifier; power amplifier module;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
