Title :
Simulation and measurement of back side etched inductors
Author :
Korndörfer, Falk ; Kaynak, Mehmet ; Mühlhaus, Volker
Author_Institution :
Innovations for High Performance Microelectron., Frankfurt (Oder), Germany
Abstract :
Deep-silicon etching was applied to an inductor in a 0.25 μm SiGe:C BiCMOS process. Significant increase of quality factor was achieved. Different simulations of the inductor were done with a planar EM simulator. The way how to handle non-homogenous dielectrics in a planar EM simulator is shown. A good agreement between measurement and simulation can be seen. The effect of back side etching is well predicted by EM simulation.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; etching; inductors; semiconductor materials; BiCMOS process; SiGe; back side etched inductors; deep-silicon etching; nonhomogenous dielectrics; planar EM simulator; quality factor; size 0.25 mum; Analytical models; Electrical resistance measurement; Frequency measurement; Inductors; Metals; Resistance; Substrates;
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
