Study on the test method of junction temperature change procedure for electronic devices based on simulation

Quality of the performance and parameters of electronic devices under high-low temperature environments is one of the most important aspects for evaluating its reliability. To the problem that the junction temperature control of electronic devices is not accurate in large batch testing under high-low temperature environments, this paper establishes the junction temperature change equation with time based on the research on several test methods, then presents a method which uses the software of ANSYS to simulate the junction temperature change procedure with time. The relationship curve between them is obtained, which can guarantee the accuracy of control to the electronic device junction temperature change under High-low temperature test. Finally, a junction temperature measurement experiment with a typical packaged device is done, which validates the feasibility of this method.