Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

Author

Daeseok Lee ; Jeonghwan Song ; Jiyong Woo ; Jaesung Park ; Sangsu Park ; Euijun Cha ; Sangheon Lee ; Yunmo Koo ; Kibong Moon ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

214

Lastpage

216

Abstract

For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.

Keywords

circuit optimisation; random-access storage; switching; ReRAM; conducting filament; on/off ratio; optimized lightning rod effect; physical switching gap; resistive random access memory; switching uniformity; Annealing; Degradation; Electrodes; Hafnium compounds; Nonvolatile memory; Resistance; Switches; ON/OFF ratio; ReRAM; lightning-rod effect; triple layer structure; variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2295592

Filename

6705610