Title :
Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM
Author :
Daeseok Lee ; Jeonghwan Song ; Jiyong Woo ; Jaesung Park ; Sangsu Park ; Euijun Cha ; Sangheon Lee ; Yunmo Koo ; Kibong Moon ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.
Keywords :
circuit optimisation; random-access storage; switching; ReRAM; conducting filament; on/off ratio; optimized lightning rod effect; physical switching gap; resistive random access memory; switching uniformity; Annealing; Degradation; Electrodes; Hafnium compounds; Nonvolatile memory; Resistance; Switches; ON/OFF ratio; ReRAM; lightning-rod effect; triple layer structure; variability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2295592
