The effect of stress(strain) on NMOSFET properties

In this paper, it is first time to introduce a new effect-Meso-transconductance Effect, applying a stress(strain) on the gate plane of NMOSFET along the axis direction. The stress causes a strain and the strain, in turn, affects the current-voltage response. The results show that the strain can make the changes of ID-VDS characteristic, ID-VGS characteristic, Gtr-VGS characteristic. The results indicate that the Meso-transconductance Effect has potential applications in Microelectronic devices that are small in size and demand low power consumption.