• DocumentCode
    533339
  • Title

    The relevance of long-duration TLP stress on system level ESD design

  • Author

    Boselli, Gianluca ; Salman, Akram ; Brodsky, Jonathan ; Kunz, Hans

  • Author_Institution
    Analog Technol. Dev. ESD Lab., Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2010
  • fDate
    3-8 Oct. 2010
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    An analysis of long-duration TLP stress will be performed on ESD clamps representative of the mo commonly used ESD protection strategies. It will be shown that snapback-based High Voltage devices feature static filamentary conduction after triggering. This leads to failure for TLP pulse widths in excess of 100ns, we below the expected power scaling levels. The need for long TLP testing to establish ESD protection robustness in the system level stress regime will be demonstrated.
  • Keywords
    electrostatic discharge; ESD clamps; ESD protection strategies; long-duration TLP stress; snapback-based high voltage devices; static filamentary conduction; system level ESD design; Clamps; Electrostatic discharge; FETs; Fitting; Metals; Stress; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
  • Conference_Location
    Reno, NV
  • Print_ISBN
    978-1-58537-182-2
  • Electronic_ISBN
    978-1-58537-182-2
  • Type

    conf

  • Filename
    5623705