DocumentCode :
533339
Title :
The relevance of long-duration TLP stress on system level ESD design
Author :
Boselli, Gianluca ; Salman, Akram ; Brodsky, Jonathan ; Kunz, Hans
Author_Institution :
Analog Technol. Dev. ESD Lab., Texas Instrum. Inc., Dallas, TX, USA
fYear :
2010
fDate :
3-8 Oct. 2010
Firstpage :
1
Lastpage :
10
Abstract :
An analysis of long-duration TLP stress will be performed on ESD clamps representative of the mo commonly used ESD protection strategies. It will be shown that snapback-based High Voltage devices feature static filamentary conduction after triggering. This leads to failure for TLP pulse widths in excess of 100ns, we below the expected power scaling levels. The need for long TLP testing to establish ESD protection robustness in the system level stress regime will be demonstrated.
Keywords :
electrostatic discharge; ESD clamps; ESD protection strategies; long-duration TLP stress; snapback-based high voltage devices; static filamentary conduction; system level ESD design; Clamps; Electrostatic discharge; FETs; Fitting; Metals; Stress; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
Type :
conf
Filename :
5623705
Link To Document :
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