Title :
A novel physical model for the SCR ESD protection device
Author :
Romanescu, Alexandru ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Ferrari, Philippe ; Arnould, Jean-Daniel ; Manouvrier, Jean-Robert ; Beckrich-Ros, Helene
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. In order to improve the accuracy, convergence, scalability, and the parameter extraction and support time, a new model was developed. It aims to reach its goals through a stronger relation between the physical phenomena and its constitutive equations. The compact model was validated in CMOS 40 nm and CMOS 130 nm technologies.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; thyristors; CMOS technology; SCR ESD protection device; parameter extraction; physical model; silicon controlled rectifier; size 130 nm; size 40 nm; Capacitance; Mathematical model; Parameter extraction; Resistance; Semiconductor device modeling; Thyristors; Transistors;
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
