Author :
Thijs, S. ; Scholz, M. ; Linten, D. ; Griffoni, A. ; Russ, C. ; Stadler, W. ; Lafonteese, D. ; Vashchenko, V. ; Sawada, M. ; Concannon, A. ; Hopper, P. ; Jansen, P. ; Groeseneken, G.
Abstract :
As a first step towards correlation of system level ESD robustness based on component level ESD results, on-wafer Human Metal Model (HMM) measurements are compared with on-wafer HBM for a wide range of devices in various process technologies. A device level System to Component level Correlation Factor (SCCF) is defined and can range from 10 to 150% based upon physical failure mechanisms. Five main categories are defined independent of process technology.
Keywords :
electrostatic discharge; failure analysis; integrated circuit reliability; SCCF; component level ESD; on-wafer HBM; on-wafer human metal model measurements; physical failure mechanisms; process technology; system level ESD robustness correlation; system to component level correlation factor; Correlation; Current measurement; Electrostatic discharge; Hidden Markov models; Robustness; Stress; Voltage measurement;
