Title :
A TLP-based characterization method for transient gate biasing of MOS devices in high-voltage technologies
Author :
Willemen, Joost ; Johnsson, David ; Cao, Yiqun ; Stecher, Matthias
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
A method to characterize the dynamic behavior of high voltage MOS devices is presented. It utilizes TLP measurements to determine the MOS output characteristics with fixed gate voltages and with floating gates. It characterizes the gate-coupling effect that is defined by the ratio of the device capacitances. This is relevant for design of ESD circuits and compact modelling. Characterization of HV devices in a 0.35um 60V BCD technology illustrates the method.
Keywords :
MIS devices; electrostatic discharge; pulse measurement; BCD technology; ESD circuits; MOS devices; TLP measurements; TLP-based characterization method; fixed gate voltages; floating gates; gate-coupling effect; high-voltage technologies; size 0.35 mum; transient gate biasing; voltage 60 V; Capacitance; Current measurement; Logic gates; MOS devices; Pulse measurements; Transient analysis; Voltage measurement;
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
