Title :
On the dynamic destruction of LDMOS transistors beyond voltage overshoots in high voltage ESD
Author :
Cao, Yiqun ; Glaser, Ulrich ; Willemen, Joost ; Frei, Stephan ; Stecher, Matthias
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
ESD protected LDMOS transistors show sensitivity to voltage overshoots. The pn-diode, nLDMOS and the combination are investigated in detail. The unique failure mode is identified as ongoing triggering of the parasitic bipolar transistor beyond a rise-time-dependent voltage overshoot of the ESD diode. Solutions for enhanced ESD protection are presented.
Keywords :
MOSFET; bipolar transistors; electrostatic discharge; semiconductor device reliability; semiconductor diodes; LDMOS transistors; dynamic destruction; failure mode; high voltage ESD; parasitic bipolar transistor; pn-diode; rise-time-dependent voltage overshoot; voltage overshoots; Current measurement; Electrostatic discharge; Logic gates; Semiconductor optical amplifiers; Transient analysis; Transistors; Voltage measurement;
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
