Title :
Anomalous ESD failures in NLDMOS during reverse recovery
Author :
Hirano, Tetsuro ; Hase, Mitsuo ; Ogura, Takashi ; Tanaka, Shuji ; Fujiwara, Shuji
Author_Institution :
SANYO Semicond. Co., Ltd., Gunma, Japan
Abstract :
Anomalous NLDMOS behavior under ESD stresses is investigated. Negative MM test results show failures at low stress voltage and local distributions of destruction spots. TCAD simulations clarified that the reverse recovery current during the MM stress causes parasitic NPN turn-on and effectively lowers the trigger voltage (Vt1).
Keywords :
MOS integrated circuits; electrostatic discharge; failure analysis; large scale integration; ESD failures; ESD stresses; LSI; TCAD simulations; anomalous NLDMOS behavior; negative MM test; reverse recovery current; trigger voltage; Doping; Electrostatic discharge; Integrated circuit modeling; Lattices; Semiconductor process modeling; Stress; Transistors;
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
