DocumentCode
533392
Title
HBM parameter extraction and Transient Safe Operating Area
Author
Linten, D. ; Thijs, S. ; Griffoni, A. ; Scholz, M. ; Chen, S.-H. ; Lafonteese, D. ; Vashchenko, V. ; Sawada, M. ; Concannon, A. ; Hopper, P. ; Jansen, P. ; Groeseneken, G.
Author_Institution
Imec, Leuven, Belgium
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
8
Abstract
The extraction of ESD parameters and a Transient Safe Operating Area (TSOA) based on on-wafer HBM-IV measurements with voltage and current waveform capturing are introduced. The HBM parameters provide an easy way to get valuable insights in the transient device operation of ESD protection devices, circuits and their safe operating area under HBM stress conditions.
Keywords
electrostatic discharge; transient analysis; ESD parameter extraction; ESD protection devices; HBM parameter extraction; HBM stress conditions; TSOA; current waveform capturing; on-wafer HBM-IV measurements; transient device operation; transient safe operating area; voltage waveform capturing; Arrays; Current measurement; Electrostatic discharge; Logic gates; Stress; Thyristors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623763
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