DocumentCode :
533397
Title :
Behavior of RF MEMS switches under ESD stress
Author :
Sangameswaran, Sandeep ; De Coster, Jeroen ; Cherman, Vladimir ; Czarnecki, Piotr ; Linten, Dimitri ; Scholz, Mirko ; Thijs, Steven ; Groeseneken, Guido ; De Wolf, Ingrid
fYear :
2010
fDate :
3-8 Oct. 2010
Firstpage :
1
Lastpage :
8
Abstract :
ESD tests have been performed on RF MEMS capacitive switches in different ambient pressure and environmental conditions. This is done using an integrated measurement setup which can measure out-of-plane displacement as well as current and voltage in the MEMS during an HBM ESD stress event. The effect of ESD on the switch characteristics is investigated.
Keywords :
electrostatic discharge; microswitches; ESD tests; HBM ESD stress event; RF MEMS capacitive switches; ambient pressure; integrated measurement setup; out-of-plane displacement; Atmospheric measurements; Current measurement; Electrostatic discharge; Micromechanical devices; Microswitches; Optical switches; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location :
Reno, NV
Print_ISBN :
978-1-58537-182-2
Electronic_ISBN :
978-1-58537-182-2
Type :
conf
Filename :
5623768
Link To Document :
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