DocumentCode
53369
Title
Lateral Organic Semiconductor Photodetector. Part I: Use of an Insulating Layer for Low Dark Current
Author
Shafique, Umar ; Santato, Clara ; Karim, K.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume
61
Issue
10
fYear
2014
fDate
Oct. 2014
Firstpage
3465
Lastpage
3471
Abstract
The thin flexible, lightweight nature of organic semiconductor devices makes them a prime candidate for medical imaging applications such as rugged X-ray imagers for use in hospitals (i.e., immune to minor drops or shocks) or even curved X-ray imagers for specialized imaging modalities of the future (e.g., compression free breast imaging). However, the performance of these organic sensors is not yet comparable with current technology (amorphous silicon) in particular owing to high dark currents. Here we show that the use of an insulator material, such as polystyrene, can dramatically improve the dark current performance of the organic photoconductor without compromising the device speed. Consequently, we are able to operate the sensor under high bias to achieve significant improvements in the critical parameters for image sensors such as photo-to-dark current ratio, sensitivity, dynamic range, and transient speed. Our work has the potential to expedite the adoption of organic semiconductor technology for a variety of digital imaging applications especially in the field of low-cost, portable biomedical equipment.
Keywords
image sensors; insulating materials; organic semiconductors; photodetectors; digital imaging; dynamic range; image sensor critical parameters; insulating layer; insulator material; lateral organic semiconductor photodetector; low dark current; organic sensors; photo-to-dark current ratio; polystyrene; thin flexible semiconductor device; transient speed; Dark current; Detectors; Lighting; Metals; Organic semiconductors; Photodetectors; Semiconductor device measurement; Lateral photodetector; low dark current; organic semiconductor; polystyrene (PS) interface layer;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2348540
Filename
6891183
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