• DocumentCode
    533700
  • Title

    Electronic properties of WO3 quantum films

  • Author

    Migas, B.D. ; Shaposhnikov, L.V.

  • Author_Institution
    Inf. & Radioelectron., Belarusian State Univ., Minsk, Belarus
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    809
  • Lastpage
    810
  • Abstract
    By ab initio calculations we show that quantum confinement effects do not affect the energy band gap in the quantum films of WO3 thicker than 1.5 nm. We have also revealed that states of the surface atoms stabilize the band-gap edges.
  • Keywords
    ab initio calculations; energy gap; semiconductor thin films; surface states; tungsten compounds; WO3 quantum films; WO3; ab initio calculations; band-gap edges; electronic properties; energy band gap; quantum confinement effects; surface atom states; Computational modeling; Films; Nanowires; Photonic band gap; Silicon; Surface morphology; Surface reconstruction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632427
  • Filename
    5632427
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533700