Title :
Electronic properties of WO3 quantum films
Author :
Migas, B.D. ; Shaposhnikov, L.V.
Author_Institution :
Inf. & Radioelectron., Belarusian State Univ., Minsk, Belarus
Abstract :
By ab initio calculations we show that quantum confinement effects do not affect the energy band gap in the quantum films of WO3 thicker than 1.5 nm. We have also revealed that states of the surface atoms stabilize the band-gap edges.
Keywords :
ab initio calculations; energy gap; semiconductor thin films; surface states; tungsten compounds; WO3 quantum films; WO3; ab initio calculations; band-gap edges; electronic properties; energy band gap; quantum confinement effects; surface atom states; Computational modeling; Films; Nanowires; Photonic band gap; Silicon; Surface morphology; Surface reconstruction;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632427
