Peculiarities of germanium driving back from germanium-silicate glass formed in the process of oxidation of the germanium-doped polycrystalline silikon films

Author

Kovalevsky, A.A. ; Borisevich, M.V. ; Strogova, S.A. ; Plyakin, V.D.

Author_Institution

Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

805

Lastpage

806

Abstract

It is determined that the content of Ge in the volume of germanium-silicate glass (GSG) influences density of nanocrystalline grains. It is ascertained that germanium atoms are unevenly distributing between separate nanoclusters as well as in the limits of one cluster. The size and density of germanium nanoclusters may be independently checked by the way of changing of germanium content in the composition of GSG, by the medium, temperature and by the heat treatment.

Keywords

chemical analysis; chemical exchanges; crystal microstructure; germanium; germanium compounds; glass; heat treatment; nanostructured materials; oxidation; GeO₂-SiO₂; germanium atoms; germanium content; germanium nanoclusters; germanium-doped polycrystalline silicon films; germanium-silicate glass composition; heat treatment; nanocrystalline grain density; oxidation process; Annealing; Atomic measurements; Germanium; Glass; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632431

Filename

5632431