Title :
Peculiarities of germanium driving back from germanium-silicate glass formed in the process of oxidation of the germanium-doped polycrystalline silikon films
Author :
Kovalevsky, A.A. ; Borisevich, M.V. ; Strogova, S.A. ; Plyakin, V.D.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
It is determined that the content of Ge in the volume of germanium-silicate glass (GSG) influences density of nanocrystalline grains. It is ascertained that germanium atoms are unevenly distributing between separate nanoclusters as well as in the limits of one cluster. The size and density of germanium nanoclusters may be independently checked by the way of changing of germanium content in the composition of GSG, by the medium, temperature and by the heat treatment.
Keywords :
chemical analysis; chemical exchanges; crystal microstructure; germanium; germanium compounds; glass; heat treatment; nanostructured materials; oxidation; GeO2-SiO2; germanium atoms; germanium content; germanium nanoclusters; germanium-doped polycrystalline silicon films; germanium-silicate glass composition; heat treatment; nanocrystalline grain density; oxidation process; Annealing; Atomic measurements; Germanium; Glass; Silicon; Surface treatment;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632431
