Modified operating regime of gallium arsenide Gunn diodes with thin base

Author

Torkhov, A.N. ; Bozhkov, G.V. ; Kozlova, V.A. ; Samoilov, I.V.

Author_Institution

Sci.-Res. Inst. of Semicond., Tomsk, Russia

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

181

Lastpage

182

Abstract

Modified operating conditions of Gunn diode, SHF value of which on the first harmonic is determined by pumping processes in the charge layer and its diffusion, rather than by domain transit time, excludes frequency dependence of generation on domain transit time. This significantly extends the frequency range of the diode to 30-48 GHz. The reduced impact of a dead zone along with optimization of the dopant profile significantly increases efficiency rate of the diode to values 5-7% at input power 160-140 mW over the whole frequency range and operating current 0.55 A.

Keywords

Gunn diodes; III-V semiconductors; gallium arsenide; microwave diodes; millimetre wave diodes; GaAs; SHF value; current 0.55 A; domain transit time generation; efficiency 5 percent to 7 percent; frequency 30 GHz to 48 GHz; frequency dependence; gallium arsenide Gunn diodes; power 160 mW to 140 mW; pumping processes; Doping profiles; Frequency dependence; Gallium arsenide; Production; Schottky diodes; Time frequency analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632519

Filename

5632519