Title :
Modified operating regime of gallium arsenide Gunn diodes with thin base
Author :
Torkhov, A.N. ; Bozhkov, G.V. ; Kozlova, V.A. ; Samoilov, I.V.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
Modified operating conditions of Gunn diode, SHF value of which on the first harmonic is determined by pumping processes in the charge layer and its diffusion, rather than by domain transit time, excludes frequency dependence of generation on domain transit time. This significantly extends the frequency range of the diode to 30-48 GHz. The reduced impact of a dead zone along with optimization of the dopant profile significantly increases efficiency rate of the diode to values 5-7% at input power 160-140 mW over the whole frequency range and operating current 0.55 A.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; microwave diodes; millimetre wave diodes; GaAs; SHF value; current 0.55 A; domain transit time generation; efficiency 5 percent to 7 percent; frequency 30 GHz to 48 GHz; frequency dependence; gallium arsenide Gunn diodes; power 160 mW to 140 mW; pumping processes; Doping profiles; Frequency dependence; Gallium arsenide; Production; Schottky diodes; Time frequency analysis;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632519
