Title :
Heterostructure p-i-n diodes
Author :
Ayzenshtat, G.I. ; Bozhkov, V.G. ; Yushchenko, A.Y. ; Monastirev, E.A.
Author_Institution :
Tomsk State Univ., Tomsk, Russia
Abstract :
Heterostructure microwave beam lead p-i-n diodes are developed. Parameters of diodes were measured in a frequency range from 0.1 to 40 GHz. Insertion loss does not exceed 0.35 dB (I=10 mA). The diode capacitance was 30 fF. It is shown that diodes intensively radiate light with wave-lengths of 900-910 nanometers.
Keywords :
UHF diodes; microwave diodes; millimetre wave diodes; p-i-n diodes; capacitance 30 fF; current 10 mA; frequency 0.1 GHz to 40 GHz; heterostructure p-i-n diodes; insertion loss; microwave beam lead p-i-n diodes; wavelength 900 nm to 910 nm; Gallium arsenide; Insertion loss; Lead; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632526
