High speed amplitude millimeter wave switches of inverse type

The article concerns the results of analysis of frequency characteristics of fast amplitude switches of inverse type in the millimeter wave range with the use of the silicon diode p⁺-n-n⁺-structures mounted in a dielectric package. The dielectric package is considered in the form of the radial line with the distributed parameters which ensure transforming of input impedance of a transmission line to the diode structure switching terminals in order to realize a parallel resonance condition in a switch circuit in microwave power transmission mode. Requirements are determined for the diode parameters and construction providing realization of the optimum operating mode of the switch in a working band.