DocumentCode :
533771
Title :
Designing of multimesa IMPATT diodes of MM wave band in microsecond pulsed operation regime
Author :
Tashilov, A.S. ; Dyshekov, A.A. ; Bagov, A.N.
Author_Institution :
Kabardino-Balkarian State Univ. of Nalchik, Nalchik, Russia
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
185
Lastpage :
186
Abstract :
Theoretical calculations of overall pulse thermal resistance of mulltimesa IMPATT diodes are carried out. The possibility of its sufficient reduction for impulse IMPATT diodes of 8-mm wave band at pulse length of power supply 5 μs in 2,3 times, at duration 10 μs in 3 times is shown. The examples of possible configurations of n-mesa constructions at n = 12-100 are submitted.
Keywords :
IMPATT diodes; millimetre wave diodes; thermal resistance; MM wave band; microsecond pulsed operation regime; multimesa IMPATT diodes; pulse thermal resistance; Electromagnetic heating; Materials; Power supplies; Semiconductor diodes; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632542
Filename :
5632542
Link To Document :
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