Experimental research and simulation of microwave oscillator based on structure of static inductance transistor with negative resistance

Author

Osadchuk, V.S. ; Osadchuk, A.V. ; Semenov, A.A. ; Semenova, E.A.

Author_Institution

Vinnytsya Nat. Tech. Univ., Vinnytsya, Ukraine

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

187

Lastpage

188

Abstract

The experimental research of characteristics of the microwave oscillator based on the structure of static inductance transistor has been carried out and the model of its static and dynamic current-voltage characteristics has been improved. The results of the experimental research show that oscillating frequency changes from 770 to 900MHz, amplitude of generate oscillations changes from 5 to 22 V, average power of oscillations is 96mW, coefficient of efficiency is 80-85% when supply voltage variation is from 9 to 30 V. Calculation of characteristics by means of the simplified charge model of the structure of static inductance transistor gives quite accurate description of characteristics of the active element of the oscillator.

Keywords

microwave transistors; oscillations; oscillators; dynamic current-voltage characteristics; frequency 770 MHz to 900 MHz; microwave oscillator; negative resistance; oscillating frequency; oscillation changes; simplified charge model; static current-voltage characteristics; static inductance transistor; supply voltage variation; voltage 5 V to 22 V; voltage 9 V to 30 V; Current-voltage characteristics; Inductance; Microwave circuits; Microwave oscillators; Microwave transistors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632543

Filename

5632543