Title :
Standard technologies for microvawe semiconductor electronics based on III-nitrides
Author :
Krasovitskiy, D.M. ; Katsavets, N.I. ; Kokin, S.V. ; Filaretov, A.G. ; Chaliy, V.P.
Author_Institution :
JSC Svetlana-Rost, St. Petersburg, Russia
Abstract :
The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is expected to extend technology applicability towards X-band RF-devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave amplifiers; power transistors; AlGaN; III-nitrides; X-band RF-devices; microvawe semiconductor electronics; microwave amplifier design; power transistors; Aluminum gallium nitride; Foundries; Gallium nitride; Logic gates; Process control; Silicon carbide; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632544
