DocumentCode
533784
Title
Gann diodes on basis of variband semiconductors
Author
Storozhenko, I.P. ; Arkusha, Yu V. ; Zhivotova, E.N.
Author_Institution
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
202
Lastpage
203
Abstract
The influence of spatial inhomogeneity of different physical parameters of variband semiconductors on origination of inconsistences in Gunn diodes is investigated. Presence of special effects in Gunn diodes on the basis of variband semiconductors is proved. These effects do not exist in diodes on the basis of homogeneous semiconductors. These effects allow increasing of efficiency and oscillation frequency of Gunn diodes.
Keywords
diodes; Gann diodes; homogeneous semiconductor; spatial inhomogeneity; variband semiconductor; Gallium arsenide; Indium phosphide; Oscillators; Physics; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632555
Filename
5632555
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