Title :
Gann diodes on basis of variband semiconductors
Author :
Storozhenko, I.P. ; Arkusha, Yu V. ; Zhivotova, E.N.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The influence of spatial inhomogeneity of different physical parameters of variband semiconductors on origination of inconsistences in Gunn diodes is investigated. Presence of special effects in Gunn diodes on the basis of variband semiconductors is proved. These effects do not exist in diodes on the basis of homogeneous semiconductors. These effects allow increasing of efficiency and oscillation frequency of Gunn diodes.
Keywords :
diodes; Gann diodes; homogeneous semiconductor; spatial inhomogeneity; variband semiconductor; Gallium arsenide; Indium phosphide; Oscillators; Physics; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632555
