Title :
NDC of diodes with tunnel and resonant-tunneling borders
Author :
Prokhorov, E.D. ; Botsula, O.V.
Author_Institution :
Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The diodes, in which negative differential conductivity (NDC) arises at certain stresses between ohmic contacts owe to tunneling or resonant tunneling of electrons through lateral borders of the diode, are considered, and their current-voltage characteristics are determined in the present paper.
Keywords :
ohmic contacts; resonant tunnelling diodes; tunnelling; NDC; current-voltage characteristic; diodes; electron tunneling; negative differential conductivity; ohmic contact; resonant-tunneling border; Conductivity; Current-voltage characteristics; Gallium arsenide; Mathematical model; Resonant tunneling devices; Semiconductor diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632567
