Title :
Investigation of control mechanism of parameters of microstrip transmission line on semicondactor substrate
Author :
Kopylov, A.F. ; Kopylova, N.A.
Author_Institution :
Siberian Fed. Univ., Krasnoyarsk, Russia
Abstract :
The section of a microstrip line on a semiconductor substrate was investigated at frequency range 5 to 15 Hz. Gallium arsenide was chosen as a material of the semiconductor substrate. In this report results of numerical simulation of phase-frequency and amplitude-frequency responses of power transmission coefficient through section of MLSS with proper frequency responses of complex transmission constant are compared. It is shown that control mechanism in MLSS is based on two factors - resonance effects of section of MLSS and changing of attenuation constant.
Keywords :
III-V semiconductors; gallium arsenide; microstrip lines; transmission lines; amplitude-frequency responses; control mechanism; frequency 5 Hz to 15 Hz; gallium arsenide; microstrip transmission line; numerical simulation; phase-frequency; power transmission coefficient; semiconductor substrate; Attenuation; Electronic mail; Microstrip; Numerical simulation; Resonant frequency; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632572
