DocumentCode
533792
Title
Investigation of control mechanism of parameters of microstrip transmission line on semicondactor substrate
Author
Kopylov, A.F. ; Kopylova, N.A.
Author_Institution
Siberian Fed. Univ., Krasnoyarsk, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
224
Lastpage
225
Abstract
The section of a microstrip line on a semiconductor substrate was investigated at frequency range 5 to 15 Hz. Gallium arsenide was chosen as a material of the semiconductor substrate. In this report results of numerical simulation of phase-frequency and amplitude-frequency responses of power transmission coefficient through section of MLSS with proper frequency responses of complex transmission constant are compared. It is shown that control mechanism in MLSS is based on two factors - resonance effects of section of MLSS and changing of attenuation constant.
Keywords
III-V semiconductors; gallium arsenide; microstrip lines; transmission lines; amplitude-frequency responses; control mechanism; frequency 5 Hz to 15 Hz; gallium arsenide; microstrip transmission line; numerical simulation; phase-frequency; power transmission coefficient; semiconductor substrate; Attenuation; Electronic mail; Microstrip; Numerical simulation; Resonant frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632572
Filename
5632572
Link To Document