Method of microwave scanning tomography of electrical properties of semiconductors

Author

Melnik, I.S. ; Gordienko, O.J.

Author_Institution

MES Ukraine, Kharkov Nat. Univ. of Radioelectron., Kharkov, Ukraine

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

721

Lastpage

722

Abstract

The technique of microwave diagnostics of semiconductors with arbitrary distribution of electrical properties in depth has been developed. It has been proposed to conduct the scanning of the value of the air gap between the resonator sensor and the surface of the semiconductor. The one-dimensional reconstruction algorithm of distribution of electrical properties of the semi-conductor has been generated. It consists of solution of the integral equation for the intermediate function, which completely characterizes the properties of the object, and step-by-step algorithm for solution of the ill-posed inverse problem.

Keywords

air gaps; electric properties; integral equations; microwave measurement; semiconductors; tomography; air gap; electrical properties; ill-posed inverse problem; integral equation; microwave diagnostics; microwave scanning tomography; one-dimensional reconstruction algorithm; resonator sensor; semiconductors; Electronic mail; Inverse problems; Mathematical model; Microwave circuits; Microwave imaging; Tomography;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632574

Filename

5632574