Fractal mode of distribution of surface potential of gate layer in gallium arsenide structure of field-effect transistor

On account of fractal nature (D_f=2.62) of the gate layer of FET, instrumental characteristics, when length and width of the gate are reduced, will change disproportionally to square of change of linear dimensions of the gate (versus two-dimensional case) and noticeably slower - in proportion to changing of linear dimensions to the power of 4-D_f, where 2<;;D_f<;;3. The fractal nature of the surface potential of the gate layer might be caused by either fractal distribution of ionized donor impurity in the bulk and at its surface or by fractal distribution of charged adsorbing ions.