Title :
Dielectric characteristics of thin film capacitors based on anodized Al/Ta layers
Author :
Pligovka, A.N. ; Luferov, A.N. ; Nosik, R.F. ; Mozalev, A.M.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
MIM thin film capacitors have been developed with three types of nanostructured thin film dielectrics made from the anodic oxides of Al/Ta metal bilayer. High breakdown voltages, low leakage currents and dielectric losses have been achieved.
Keywords :
MIM devices; aluminium; dielectric losses; dielectric materials; electric breakdown; leakage currents; tantalum; thin film capacitors; Al-Ta; MIM thin film capacitors; anodic oxides; dielectric losses; high breakdown voltages; low leakage currents; nanostructured thin film dielectrics; Annealing; Capacitors; Dielectric losses; Electronic mail; Leakage current; Materials;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632734
