• DocumentCode
    533954
  • Title

    Study of resistance of low-noise amplifier based on GaN PHEMT, to input microwave power

  • Author

    Antonova, N.E. ; Zemliakov, V.E. ; Krutov, A.V. ; Rebrov, A.S.

  • Author_Institution
    FSUE RPC "Istok", Fryazino, Russia
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    942
  • Lastpage
    943
  • Abstract
    Development and practical realization results of low noise amplifiers robust to input microwave power are presented. The measured parameters are shown.
  • Keywords
    III-V semiconductors; electrical resistivity; field effect MMIC; gallium compounds; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; GaN; PHEMT; input microwave power; low-noise amplifier; resistance; Gallium nitride; Microwave amplifiers; Microwave circuits; Microwave measurements; PHEMTs; Robustness; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632758
  • Filename
    5632758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533954