Title :
Displacement current influence on frequency characteristics and Schottky FET firmness
Author :
Zuev, S.A. ; Starostenko, V.V. ; Undjakov, D.A.
Author_Institution :
Vernadsky Tavrical Nat. Univ., Simferopol, Ukraine
Abstract :
Problems of a displacement current account and its influence on frequency characteristics and electrothermal firmness of GaAs Schottky FET are considered. The numerical calculation was carried out in kinetic approach by means of a large particles approach. The analysis of a displacement current influence on the frequency characteristic and Wunsh-Bell criteria dependence for Schottky FET is resulted.
Keywords :
Schottky gate field effect transistors; Schottky FET firmness; Wunsh-Bell criteria dependence; displacement current account; displacement current influence; electrothermal firmness; frequency characteristics; Electric breakdown; Electronic mail; FETs; Gallium arsenide; Geometry; Kinetic theory;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632776
