DocumentCode :
533976
Title :
Radiation effects in microwave devices based on Gallium nitride
Author :
Gromov, D.V.
Author_Institution :
Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ., Moscow, Russia
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
932
Lastpage :
933
Abstract :
The review of radiation effects on GaN microwave semiconductor devices is presented.
Keywords :
gallium compounds; microwave devices; radiation effects; GaN; gallium nitride; microwave semiconductor device; radiation effect; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Protons; Radiation effects; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632782
Filename :
5632782
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=533976
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