Title :
AlGaN/GaN two-stage power amplifier of C-band
Author :
Guljaev, V. ; Glazunov, V. ; Zykova, G. ; Mjakichev, J. ; Chaly, V.
Author_Institution :
JSC Oktava, Novosibirsk, Russia
Abstract :
A two-stage amplifier on AlGaN/GaN heterostructure transistors has been designed for the use within 5-7 GHz frequency range. Linear gain amounts to 20±1.0 dB, input reflection factor does not exceed 10 dB. With input power of 200 mW, the output power of the amplifier is not less than 5.4 W, coefficient of efficiency is not less than 28%. Area of QMIC is 2.2×3.8mm.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave reflectometry; monolithic integrated circuits; AlGaN-GaN; C-band; QMIC; frequency 5 GHz to 7 GHz; heterostructure transistor; linear gain; power 200 mW; quasimonolithic integral circuit; reflection factor; two-stage power amplifier; Aluminum gallium nitride; Electronic mail; Gallium nitride; MMICs; Power amplifiers; Power generation; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632787
