Title :
A 2–4 GHz 25W and 50W GaN power amplifiers
Author :
Kishchinskiy, A.A. ; Nikiti, D.V.
Author_Institution :
JSC Microwave Syst., Moscow, Russia
Abstract :
Results of design and experimental investigations of two models (25W and 50W) 2-4 GHz GaN-based amplifiers are presented in this article.
Keywords :
power amplifiers; GaN-based amplifier; frequency 2 GHz to 4 GHz; power 25 W; power 50 W; power amplifier; Electronic mail; Gain; Gallium arsenide; Gallium nitride; HEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632804
