Title :
A 10 VPP SiGe voltage driver
Author :
Ostrovskyy, P. ; Gustat, H. ; Scheytt, Ch ; Stikanov, V.
Author_Institution :
IHP GmbH, Frankfurt (Oder, Germany
Abstract :
This paper presents the design and implementation of the high output swing voltage driver. Designed and fabricated in 0.25 um SiGe BiCMOS technology the driver delivers 10 Vpp output differential voltage swing at 2 Gb/s. The power consumption of the driver is 1.6 W. Measurement results show that the circuit is well suited for processing a bit stream up to 3.4 Gb/s and can be used as a driver for switch-mode amplifiers based on the transistors required high on-voltage.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; driver circuits; field effect MIMIC; integrated circuit design; low-power electronics; millimetre wave power amplifiers; BiCMOS technology; SiGe; Vpp SiGe voltage driver; differential voltage swing; high output swing voltage driver; power 1.6 W; power consumption; size 0.25 mum; switch-mode amplifier; transistor; Attenuators; Driver circuits; Modulation; Oscilloscopes; Switching circuits; Transistors; Voltage measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632831
