DocumentCode
534014
Title
A 10 VPP SiGe voltage driver
Author
Ostrovskyy, P. ; Gustat, H. ; Scheytt, Ch ; Stikanov, V.
Author_Institution
IHP GmbH, Frankfurt (Oder, Germany
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
109
Lastpage
110
Abstract
This paper presents the design and implementation of the high output swing voltage driver. Designed and fabricated in 0.25 um SiGe BiCMOS technology the driver delivers 10 Vpp output differential voltage swing at 2 Gb/s. The power consumption of the driver is 1.6 W. Measurement results show that the circuit is well suited for processing a bit stream up to 3.4 Gb/s and can be used as a driver for switch-mode amplifiers based on the transistors required high on-voltage.
Keywords
BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; driver circuits; field effect MIMIC; integrated circuit design; low-power electronics; millimetre wave power amplifiers; BiCMOS technology; SiGe; Vpp SiGe voltage driver; differential voltage swing; high output swing voltage driver; power 1.6 W; power consumption; size 0.25 mum; switch-mode amplifier; transistor; Attenuators; Driver circuits; Modulation; Oscilloscopes; Switching circuits; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632831
Filename
5632831
Link To Document