DocumentCode :
53402
Title :
Long-term RF Burn-in Effects on Dielectric Charging of MEMS Capacitive Switches
Author :
Molinero, David ; Luo, Xiaohua ; Shen, Chih-Teng ; Palego, Cristiano ; Hwang, James C. M. ; Goldsmith, C.L.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Volume :
13
Issue :
1
fYear :
2013
fDate :
Mar-13
Firstpage :
310
Lastpage :
315
Abstract :
This paper experimentally quantified the long-term effects of RF burn-in, in terms of burn-in and recovery times, and found the effects to be semipermanent. Specifically, most of the benefit could be realized after approximately 20 min of RF burn-in, which would then last for several months. Additionally, since similar effects were observed on both real and faux switches, the effects appeared to be of electrical rather than mechanical nature. These encouraging results should facilitate the application of the switches in RF systems, where high RF power could be periodically applied to rejuvenate the switches.
Keywords :
dielectric thin films; microswitches; microwave switches; MEMS capacitive switches; RF systems; dielectric charging; dielectric films; faux switches; high RF power; long-term RF burn-in effects; microwave devices; Conductors; Dielectrics; Electrodes; Radio frequency; Surface charging; Surface treatment; Transient analysis; Dielectric films; dielectric materials; microelectromechanical devices; microwave devices; switches;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2246567
Filename :
6461078
Link To Document :
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