Influence of GaN surface morphology on characteristics of Al0,3Ga0,7N/GaN heterostructures created by molecular beam epitaxy

Author

Tsarik, K.A. ; Nevolin, V.K.

Author_Institution

Moscow Inst. of Electron. Technol. (Tech. Univ.), Moscow, Russia

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

836

Lastpage

837

Abstract

The technique of forming III-N layers with low defects level is developed. It is based on method of molecular beam epitaxy with atomic force microscopy using. It is demonstrated that the structure perfection of layers, which is estimated by the surface defects number, is directly connected with two-dimensional electron gas (2DEG) characteristics in formed heterostructures.

Keywords

III-V semiconductors; aluminium compounds; atomic force microscopy; gallium compounds; molecular beam epitaxial growth; semiconductor growth; surface morphology; two-dimensional electron gas; wide band gap semiconductors; 2DEG characteristics; Al_0.3Ga_0.7N-GaN; Al_0.3Ga_0.7N-GaN heterostructure characteristics; GaN surface morphology; III-N layer formation; atomic force microscopy; low defects level; molecular beam epitaxy; structure layer perfection; surface defects number; two-dimensional electron gas; Aluminum gallium nitride; Gallium; Gallium nitride; Molecular beam epitaxial growth; Rough surfaces; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632850

Filename

5632850