DocumentCode :
534034
Title :
Sub-millimeter diodes on base of single-barrier nanostructure
Author :
Goncharuk, N.M.
Author_Institution :
Res. Inst. Orion, Kiev, Ukraine
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
838
Lastpage :
839
Abstract :
A small-signal model of GaN/AlGaN/GaN nanostructural diode with electron tunnel injection through AlGaN potential barrier and transit in GaN drift layer is created considering tunnel injection delay. Parameters and impedance characteristics are determined for the sub-millimeter diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; submillimetre wave diodes; tunnelling; wide band gap semiconductors; GaN-AlGaN-GaN; drift layer; electron tunnel injection; nanostructural diode; potential barrier; single-barrier nanostructure; small-signal model; submillimeter diodes; tunnel injection delay; Aluminum gallium nitride; Conductivity; Delay; Electric potential; Gallium nitride; Resistance; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632856
Filename :
5632856
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=534034
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