DocumentCode
534034
Title
Sub-millimeter diodes on base of single-barrier nanostructure
Author
Goncharuk, N.M.
Author_Institution
Res. Inst. Orion, Kiev, Ukraine
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
838
Lastpage
839
Abstract
A small-signal model of GaN/AlGaN/GaN nanostructural diode with electron tunnel injection through AlGaN potential barrier and transit in GaN drift layer is created considering tunnel injection delay. Parameters and impedance characteristics are determined for the sub-millimeter diodes.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; submillimetre wave diodes; tunnelling; wide band gap semiconductors; GaN-AlGaN-GaN; drift layer; electron tunnel injection; nanostructural diode; potential barrier; single-barrier nanostructure; small-signal model; submillimeter diodes; tunnel injection delay; Aluminum gallium nitride; Conductivity; Delay; Electric potential; Gallium nitride; Resistance; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632856
Filename
5632856
Link To Document